Технічний опис BSM50GD170DLBOSA1 Infineon Technologies
Description: IGBT MOD 1700V 100A 480W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 480 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V.
Інші пропозиції BSM50GD170DLBOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BSM50GD170DLBOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1700V 100A 480W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 50A NTC Thermistor: No Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 480 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V |
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