BSN20,235 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 50V 173MA TO236AB
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 830mW (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 173mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
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Технічний опис BSN20,235 Nexperia USA Inc.
Description: MOSFET N-CH 50V 173MA TO236AB, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 830mW (Tc), Rds On (Max) @ Id, Vgs: 15Ohm @ 100mA, 10V, Current - Continuous Drain (Id) @ 25°C: 173mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Obsolete.
