BSO612CVGHUMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N/P-CH 60V 3A/2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-DSO-8
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Технічний опис BSO612CVGHUMA1 Infineon Technologies
Description: MOSFET N/P-CH 60V 3A/2A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3A, 2A, Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V, Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: PG-DSO-8.