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BSP304A,126 NXP USA Inc.

Виробник: NXP USA Inc.
Description: MOSFET P-CH 300V 170MA TO92-3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2.55V @ 1mA

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Технічний опис BSP304A,126 NXP USA Inc.

Description: MOSFET P-CH 300V 170MA TO92-3, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 2.55V @ 1mA.