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BSR58,215

BSR58,215 NXP USA Inc.

BSR56%2C57%2C58.pdf
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 0.5 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис BSR58,215 NXP USA Inc.

Description: JFET N-CH 40V SOT23, Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V, Voltage - Cutoff (VGS off) @ Id: 800 mV @ 0.5 nA, Resistance - RDS(On): 60 Ohms, Power - Max: 250 mW, Drain to Source Voltage (Vdss): 40 V, Supplier Device Package: SOT-23 (TO-236AB), Voltage - Breakdown (V(BR)GSS): 40 V, FET Type: N-Channel, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).