BSS126L6327HTSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 8µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
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Технічний опис BSS126L6327HTSA1 Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21mA (Ta), Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V, FET Feature: Depletion Mode, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.6V @ 8µA, Supplier Device Package: PG-SOT23, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V.