BSS138-T

BSS138-T onsemi


BSS138_Rev3_Sep2017.PDF Виробник: onsemi
Description: MOSFET N-CH 50V 220MA SOT23-3
Packaging: Bulk
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: EFCP1313-4CC-037
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
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Технічний опис BSS138-T onsemi

Description: MOSFET N-CH 50V 220MA SOT23-3, Packaging: Bulk, Package / Case: 4-XFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: EFCP1313-4CC-037, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V.