Технічний опис BSS84AKT,115 NEXPERIA
Description: MOSFET P-CH 50V 150MA SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 150mA (Ta), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V, Power Dissipation (Max): 250mW (Ta), 770mW (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SC-75, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BSS84AKT,115
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
BSS84AKT,115 | Виробник : NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Power Dissipation (Max): 250mW (Ta), 770mW (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-75 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
|
![]() |
BSS84AKT,115 | Виробник : NXP USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Power Dissipation (Max): 250mW (Ta), 770mW (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-75 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |