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BST16,115

BST16,115 NXP USA Inc.

BST15,16.pdf
Виробник: NXP USA Inc.
Description: TRANS PNP 300V 0.2A SOT89-3
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: SOT-89-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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Технічний опис BST16,115 NXP USA Inc.

Description: TRANS PNP 300V 0.2A SOT89-3, Power - Max: 1.3 W, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 200 mA, Supplier Device Package: SOT-89-3, Frequency - Transition: 15MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).