BST72A,112 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 190MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 830mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
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Технічний опис BST72A,112 NXP USA Inc.
Description: MOSFET N-CH 100V 190MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): 20V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 830mW (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Bulk.