BSZ180P03NS3EGATMA

BSZ180P03NS3EGATMA INFINEON TECHNOLOGIES


pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A7635D7851CC&compId=BSZ180P03NS3EGATMA-DTE.pdf?ci_sign=971d97016924af893a513ca586abb1484fedd47a Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
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Технічний опис BSZ180P03NS3EGATMA INFINEON TECHNOLOGIES

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8, Type of transistor: P-MOSFET, Technology: OptiMOS™ P3, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -39.6A, Power dissipation: 40W, Case: PG-TSDSON-8, Gate-source voltage: ±25V, On-state resistance: 18mΩ, Mounting: SMD, Kind of channel: enhancement.