Результат пошуку "bt.11a" : > 60

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BT134W-600D,115 BT134W-600D,115 WEEN SEMICONDUCTORS 2623888.pdf Description: WEEN SEMICONDUCTORS - BT134W-600D,115 - Triac, 600 V, 1 A, SOT-223, 1 V, 11 A, 10 mA
tariffCode: 85413000
Bauform - Triac: SOT-223
rohsCompliant: YES
Haltestrom, max.: 10mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 11A
Spitzen-Durchlassspannung: 1.5V
MSL: -
usEccn: EAR99
euEccn: NLR
RMS-Durchlassstrom: 1A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 4Pin(s)
Produktpalette: BT134W
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
15+55.82 грн
22+38.94 грн
100+26.59 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BT134W-600D,115 BT134W-600D,115 WEEN SEMICONDUCTORS 2623888.pdf Description: WEEN SEMICONDUCTORS - BT134W-600D,115 - Triac, 600 V, 1 A, SOT-223, 1 V, 11 A, 10 mA
tariffCode: 85413000
Bauform - Triac: SOT-223
rohsCompliant: YES
Haltestrom, max.: 10mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 11A
Spitzen-Durchlassspannung: 1.5V
MSL: -
usEccn: EAR99
euEccn: NLR
RMS-Durchlassstrom: 1A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 4Pin(s)
Produktpalette: BT134W
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
100+26.59 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
BT148W-600R,115 BT148W-600R,115 WEEN SEMICONDUCTORS 2623910.pdf Description: WEEN SEMICONDUCTORS - BT148W-600R,115 - Thyristor, 600 V, 200 µA, 600 mA, 1 A, SOT-223, 4 Pin(s)
tariffCode: 85413000
rohsCompliant: YES
Haltestrom, max.: 6mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 11A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Durchlassstrom, durchschnittlich: 600mA
euEccn: NLR
RMS-Durchlassstrom: 1A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 4Pin(s)
Produktpalette: BT148W
Zündstrom, max.: 200µA
productTraceability: No
Thyristormontage: Oberflächenmontage
Bauform - Thyristor: SOT-223
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
на замовлення 1359 шт:
термін постачання 21-31 дні (днів)
15+55.00 грн
22+37.46 грн
50+31.53 грн
200+23.78 грн
500+17.99 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BT148W-600R,115 BT148W-600R,115 WEEN SEMICONDUCTORS 2623910.pdf Description: WEEN SEMICONDUCTORS - BT148W-600R,115 - Thyristor, 600 V, 200 µA, 600 mA, 1 A, SOT-223, 4 Pin(s)
tariffCode: 85413000
rohsCompliant: YES
Haltestrom, max.: 6mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 11A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Durchlassstrom, durchschnittlich: 600mA
euEccn: NLR
RMS-Durchlassstrom: 1A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 4Pin(s)
Produktpalette: BT148W
Zündstrom, max.: 200µA
productTraceability: No
Thyristormontage: Oberflächenmontage
Bauform - Thyristor: SOT-223
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
на замовлення 1359 шт:
термін постачання 21-31 дні (днів)
100+31.53 грн
200+23.78 грн
500+17.99 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
BTF60702ERVXUMA1 BTF60702ERVXUMA1 INFINEON 2873420.pdf Description: INFINEON - BTF60702ERVXUMA1 - LEISTUNGSSCHALT. AEC-Q100, -40 BIS 150°C
tariffCode: 85423990
Durchlasswiderstand: 0.06ohm
rohsCompliant: YES
Überhitzungsschutz: Ja
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q100
Strombegrenzung: 11A
IC-Gehäuse / Bauform: TDSO
usEccn: EAR99
Anzahl der Kanäle: 2Kanäle
Betriebstemperatur, min.: -40°C
Polarität der Eingänge On / Enable: Aktiv-High
Leistungsschaltertyp: High-Side
euEccn: NLR
Eingangsspannung: 36V
Anzahl der Pins: 14Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 150°C
Anzahl der Ausgänge: 2Ausgänge
SVHC: No SVHC (21-Jan-2025)
на замовлення 3289 шт:
термін постачання 21-31 дні (днів)
3+334.26 грн
10+252.75 грн
25+233.82 грн
50+206.41 грн
100+180.65 грн
250+171.48 грн
500+166.54 грн
1000+161.60 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTF60702ERVXUMA1 BTF60702ERVXUMA1 INFINEON 2873420.pdf Description: INFINEON - BTF60702ERVXUMA1 - LEISTUNGSSCHALT. AEC-Q100, -40 BIS 150°C
tariffCode: 85423990
Durchlasswiderstand: 0.06ohm
rohsCompliant: YES
Überhitzungsschutz: Ja
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q100
Strombegrenzung: 11A
IC-Gehäuse / Bauform: TDSO
usEccn: EAR99
Anzahl der Kanäle: 2Kanäle
Betriebstemperatur, min.: -40°C
Polarität der Eingänge On / Enable: Aktiv-High
Leistungsschaltertyp: High-Side
euEccn: NLR
Eingangsspannung: 36V
Anzahl der Pins: 14Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 150°C
Anzahl der Ausgänge: 2Ausgänge
SVHC: No SVHC (21-Jan-2025)
на замовлення 3289 шт:
термін постачання 21-31 дні (днів)
100+180.65 грн
250+171.48 грн
500+166.54 грн
1000+161.60 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
BTT62001ENAXUMA1 BTT62001ENAXUMA1 INFINEON 2873428.pdf Description: INFINEON - BTT62001ENAXUMA1 - LEISTUNGSSCHALT. AEC-Q100, -40 BIS 150°C
tariffCode: 85423990
Durchlasswiderstand: 0.2ohm
rohsCompliant: YES
Überhitzungsschutz: Ja
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q100
Strombegrenzung: 11A
IC-Gehäuse / Bauform: TDSO
MSL: MSL 2A - 4 Wochen
usEccn: EAR99
Anzahl der Kanäle: 1Kanäle
Betriebstemperatur, min.: -40°C
Polarität der Eingänge On / Enable: Aktiv-High
Leistungsschaltertyp: High-Side
euEccn: NLR
Eingangsspannung: 36V
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Anzahl der Ausgänge: 1Ausgänge
SVHC: No SVHC (21-Jan-2025)
на замовлення 2894 шт:
термін постачання 21-31 дні (днів)
100+82.33 грн
500+68.80 грн
1500+61.46 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
BTT62001ENAXUMA1 BTT62001ENAXUMA1 INFINEON 2873428.pdf Description: INFINEON - BTT62001ENAXUMA1 - LEISTUNGSSCHALT. AEC-Q100, -40 BIS 150°C
tariffCode: 85423990
Durchlasswiderstand: 0.2ohm
rohsCompliant: YES
Überhitzungsschutz: Ja
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q100
Strombegrenzung: 11A
IC-Gehäuse / Bauform: TDSO
MSL: MSL 2A - 4 Wochen
usEccn: EAR99
Anzahl der Kanäle: 1Kanäle
Betriebstemperatur, min.: -40°C
Polarität der Eingänge On / Enable: Aktiv-High
Leistungsschaltertyp: High-Side
euEccn: NLR
Eingangsspannung: 36V
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Anzahl der Ausgänge: 1Ausgänge
SVHC: No SVHC (21-Jan-2025)
на замовлення 2894 шт:
термін постачання 21-31 дні (днів)
6+137.49 грн
50+92.21 грн
100+82.33 грн
500+68.80 грн
1500+61.46 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BTT62004ESAXUMA1 BTT62004ESAXUMA1 INFINEON 2873429.pdf Description: INFINEON - BTT62004ESAXUMA1 - Leistungsverteilungsschalter, High-Side, 4 Ausgänge, 36V, 0.2 Ohm, TSSOP, 24 Pins
tariffCode: 85423990
Durchlasswiderstand: 0.2ohm
rohsCompliant: YES
Überhitzungsschutz: Ja
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q100
Strombegrenzung: 11A
IC-Gehäuse / Bauform: TSDSO
MSL: MSL 2A - 4 Wochen
usEccn: EAR99
Anzahl der Kanäle: 4Kanäle
Betriebstemperatur, min.: -40°C
Polarität der Eingänge On / Enable: Aktiv-High
Leistungsschaltertyp: High-Side
euEccn: NLR
Eingangsspannung: 36V
Anzahl der Pins: 24Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 150°C
Anzahl der Ausgänge: 4Ausgänge
SVHC: No SVHC (21-Jan-2025)
на замовлення 67897 шт:
термін постачання 21-31 дні (днів)
100+165.13 грн
250+156.66 грн
500+151.02 грн
1000+146.08 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
BTT62004ESAXUMA1 BTT62004ESAXUMA1 INFINEON 2873429.pdf Description: INFINEON - BTT62004ESAXUMA1 - Leistungsverteilungsschalter, High-Side, 4 Ausgänge, 36V, 0.2 Ohm, TSSOP, 24 Pins
tariffCode: 85423990
Durchlasswiderstand: 0.2ohm
rohsCompliant: YES
Überhitzungsschutz: Ja
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q100
Strombegrenzung: 11A
IC-Gehäuse / Bauform: TSDSO
MSL: MSL 2A - 4 Wochen
usEccn: EAR99
Anzahl der Kanäle: 4Kanäle
Betriebstemperatur, min.: -40°C
Polarität der Eingänge On / Enable: Aktiv-High
Leistungsschaltertyp: High-Side
euEccn: NLR
Eingangsspannung: 36V
Anzahl der Pins: 24Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 150°C
Anzahl der Ausgänge: 4Ausgänge
SVHC: No SVHC (21-Jan-2025)
на замовлення 67897 шт:
термін постачання 21-31 дні (днів)
3+330.96 грн
10+231.35 грн
25+222.29 грн
50+198.00 грн
100+165.13 грн
250+156.66 грн
500+151.02 грн
1000+146.08 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
HGTG11N120CN HGTG11N120CN Fairchild Semiconductor FAIRS45381-1.pdf?t.download=true&u=5oefqw Description: IGBT NPT 1200V 43A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/180ns
Switching Energy: 400µJ (on), 1.3mJ (off)
Test Condition: 960V, 11A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
144+153.05 грн
Мінімальне замовлення: 144
В кошику  од. на суму  грн.
HGTG11N120CND HGTG11N120CND onsemi hgtg11n120cnd-d.pdf Description: IGBT NPT 1200V 43A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/180ns
Switching Energy: 950µJ (on), 1.3mJ (off)
Test Condition: 960V, 11A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
1+469.98 грн
30+258.22 грн
120+215.43 грн
В кошику  од. на суму  грн.
IRGB4607DPBF IRGB4607DPBF International Rectifier IRSD-S-A0000175683-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 11A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
281+78.36 грн
Мінімальне замовлення: 281
В кошику  од. на суму  грн.
IRGB4B60KD1PBF International Rectifier IRGB4B60KD1PBF.pdf?t.download=true&u=n9mhyd Description: IGBT NPT 600V 11A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
на замовлення 57450 шт:
термін постачання 21-31 дні (днів)
268+82.02 грн
Мінімальне замовлення: 268
В кошику  од. на суму  грн.
IRGIB6B60KDPBF-INF IRGIB6B60KDPBF-INF Infineon Technologies IRSDS09614-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 11A TO220 FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 91 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO220 Full Pack
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 38 W
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
100+112.04 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
IRGS4607DPBF IRGS4607DPBF Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A 58W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
268+82.02 грн
Мінімальне замовлення: 268
В кошику  од. на суму  грн.
IRGS4607DPBF IRGS4607DPBF International Rectifier IRSD-S-A0000175683-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
на замовлення 422 шт:
термін постачання 21-31 дні (днів)
268+82.02 грн
Мінімальне замовлення: 268
В кошику  од. на суму  грн.
IRGS4607DTRLPBF IRGS4607DTRLPBF International Rectifier irgs4607dpbf.pdf?fileId=5546d462533600a40153565ad64324ca Description: IGBT 600V 11A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
245+90.07 грн
Мінімальне замовлення: 245
В кошику  од. на суму  грн.
IRGS4B60KD1TRRP IRGS4B60KD1TRRP International Rectifier IRSDS10536-1.pdf?t.download=true&u=5oefqw Description: IGBT NPT 600V 11A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Active
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
259+106.18 грн
Мінімальне замовлення: 259
В кошику  од. на суму  грн.
IRGSL4B60KD1PBF IRGSL4B60KD1PBF International Rectifier Infineon-SPS03N60C3-DS-v02_02-en.pdf?fileId=db3a3043416e106e0141735112803715 Description: IGBT NPT 600V 11A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
241+91.53 грн
Мінімальне замовлення: 241
В кошику  од. на суму  грн.
IXGH16N170A IXGH16N170A IXYS Description: IGBT NPT 1700V 16A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
1+927.27 грн
30+539.12 грн
В кошику  од. на суму  грн.
IXGT16N170A IXGT16N170A IXYS Description: IGBT NPT 1700V 16A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-268AA
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
1+1366.29 грн
30+821.88 грн
120+729.16 грн
В кошику  од. на суму  грн.
RGTVX2TS65DGC11 RGTVX2TS65DGC11 Rohm Semiconductor datasheet?p=RGTVX2TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 111A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/150ns
Switching Energy: 2.08mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 123 nC
Current - Collector (Ic) (Max): 111 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 319 W
на замовлення 530 шт:
термін постачання 21-31 дні (днів)
1+656.55 грн
30+370.93 грн
120+313.45 грн
510+264.05 грн
В кошику  од. на суму  грн.
RGTVX2TS65DGC13 RGTVX2TS65DGC13 Rohm Semiconductor rgtvx2ts65d-e.pdf Description: IGBT TRENCH FS 650V 111A TO247GE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 111 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247GE
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/150ns
Switching Energy: 2.08mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 123 nC
Current - Collector (Ic) (Max): 111 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 319 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+526.35 грн
10+347.08 грн
120+282.15 грн
В кошику  од. на суму  грн.
RGTVX2TS65GC11 RGTVX2TS65GC11 Rohm Semiconductor datasheet?p=RGTVX2TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 111A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/150ns
Switching Energy: 2.08mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 123 nC
Current - Collector (Ic) (Max): 111 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 319 W
на замовлення 408 шт:
термін постачання 21-31 дні (днів)
2+280.24 грн
30+147.83 грн
120+120.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RGTVX2TS65GC13 RGTVX2TS65GC13 Rohm Semiconductor rgtvx2ts65-e.pdf Description: IGBT TRENCH FS 650V 111A TO247GE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247GE
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/150ns
Switching Energy: 2.08mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 123 nC
Current - Collector (Ic) (Max): 111 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 319 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+532.70 грн
10+346.92 грн
120+247.65 грн
600+199.94 грн
В кошику  од. на суму  грн.
STGF14NC60KD STGF14NC60KD STMicroelectronics en.CD00058415.pdf Description: IGBT 600V 11A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 22.5ns/116ns
Switching Energy: 82µJ (on), 155µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 34.4 nC
Part Status: Active
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 28 W
на замовлення 673 шт:
термін постачання 21-31 дні (днів)
2+183.39 грн
50+86.51 грн
100+77.75 грн
500+58.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
APT11GP60BDQBG APT11GP60BDQBG Microsemi Corporation APT11GP60BDQBG.pdf Description: IGBT PT 600V 41A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 11A
Supplier Device Package: TO-247-3
IGBT Type: PT
Td (on/off) @ 25°C: 7ns/29ns
Switching Energy: 46µJ (on), 90µJ (off)
Test Condition: 400V, 11A, 5Ohm, 15V
Gate Charge: 40 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 187 W
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BTS70081EPRXUMA1 BTS70081EPRXUMA1 Infineon Technologies Infineon-BTS7008-1EPR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192f6a77abe4355 Description: BTS70081EPRXUMA1
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8.8mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTS70081EPRXUMA1 BTS70081EPRXUMA1 Infineon Technologies Infineon-BTS7008-1EPR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192f6a77abe4355 Description: BTS70081EPRXUMA1
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8.8mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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CPV363M4K CPV363M4K Vishay General Semiconductor - Diodes Division Description: IGBT MODULE 600V 11A 36W IMS-2
Packaging: Bulk
Package / Case: 19-SIP (13 Leads), IMS-2
Mounting Type: Through Hole
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 11A
NTC Thermistor: No
Supplier Device Package: IMS-2
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 36 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 740 pF @ 30 V
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HGTG11N120CN HGTG11N120CN onsemi HGT%28G%2CP%2911N120CN%2C%20HGT1S11N120CNS.pdf Description: IGBT NPT 1200V 43A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/180ns
Switching Energy: 400µJ (on), 1.3mJ (off)
Test Condition: 960V, 11A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
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IKA08N65ET6XKSA1 IKA08N65ET6XKSA1 Infineon Technologies Infineon-IKA08N65ET6-DS-v02_02-EN.pdf?fileId=5546d4625e763904015e844d49a8527c Description: IGBT TRENCH FS 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A
Supplier Device Package: PG-TO220-3-FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/59ns
Switching Energy: 110µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 17 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 33 W
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IRG4BC20MDPBF IRG4BC20MDPBF Infineon Technologies IRG4BC20MDPbF.pdf Description: IGBT 600V 18A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 11A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 21ns/463ns
Switching Energy: 410µJ (on), 2.03mJ (off)
Test Condition: 480V, 11A, 50Ohm, 15V
Gate Charge: 39 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 60 W
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IRG4BH20K-L IRG4BH20K-L Infineon Technologies irg4bh20k-l.pdf Description: IGBT 1200V 11A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
товару немає в наявності
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IRG4BH20K-LPBF IRG4BH20K-LPBF Infineon Technologies irg4bh20k-lpbf.pdf?fileId=5546d462533600a40153564356a822a5 description Description: IGBT 1200V 11A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4BH20K-S IRG4BH20K-S Infineon Technologies Infineon-IRG4BH20K-S-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015356435f0322a7 Description: IGBT 1200V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4BH20K-SPBF IRG4BH20K-SPBF Infineon Technologies Infineon-IRG4BH20K-S-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015356435f0322a7 Description: IGBT 1200V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4BH20K-STRLP IRG4BH20K-STRLP Infineon Technologies irg4bh20k-spbf.pdf?fileId=5546d462533600a4015356435f0322a7 Description: IGBT 1200V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4PH20K IRG4PH20K Infineon Technologies Infineon-IRG4PH20K-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015356480a3a230b Description: IGBT 1200V 11A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4PH20KD IRG4PH20KD Infineon Technologies Infineon-IRG4PH20KD-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a40153564801182309 description Description: IGBT 1200V 11A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/100ns
Switching Energy: 620µJ (on), 300µJ (off)
Test Condition: 800V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4PH20KDPBF IRG4PH20KDPBF Infineon Technologies irg4ph20kdpbf.pdf?fileId=5546d462533600a40153564801182309 Description: IGBT 1200V 11A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/100ns
Switching Energy: 620µJ (on), 300µJ (off)
Test Condition: 800V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4PH20KPBF IRG4PH20KPBF Infineon Technologies irg4ph20kpbf.pdf?fileId=5546d462533600a4015356480a3a230b Description: IGBT 1200V 11A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRGB4607DPBF IRGB4607DPBF Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
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IRGB4B60KD1PBF IRGB4B60KD1PBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 11A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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IRGI4045DPBF IRGI4045DPBF Infineon Technologies irgi4045dpbf.pdf Description: IGBT TRENCH 600V 11A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/73ns
Switching Energy: 64µJ (on), 123µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 33 W
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IRGI4061DPBF IRGI4061DPBF Infineon Technologies irgi4061dpbf.pdf Description: IGBT TRENCH 600V 20A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.59V @ 15V, 11A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 37ns/111ns
Switching Energy: 52µJ (on), 231µJ (off)
Test Condition: 400V, 11A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 43 W
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IRGI4090PBF IRGI4090PBF Infineon Technologies IRGI4090PbF.pdf Description: IGBT TRENCH 300V 21A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.94V @ 15V, 30A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/99ns
Test Condition: 240V, 11A, 10Ohm
Gate Charge: 34 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 34 W
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IRGIB6B60KD116P IRGIB6B60KD116P Infineon Technologies irgib6b60kd.pdf Description: IGBT NPT 600V 11A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 38 W
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IRGIB6B60KDPBF IRGIB6B60KDPBF Infineon Technologies irgib6b60kdpbf.pdf?fileId=5546d462533600a40153565259dd2434 Description: IGBT NPT 600V 11A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 38 W
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IRGS4607DPBF IRGS4607DPBF Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A 58W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
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IRGS4B60KD1PBF IRGS4B60KD1PBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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IRGS4B60KD1TRLP IRGS4B60KD1TRLP Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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IRGS4B60KD1TRLP IRGS4B60KD1TRLP Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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IRGS4B60KD1TRRP IRGS4B60KD1TRRP Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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IRGSL4B60KD1PBF IRGSL4B60KD1PBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 11A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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IXGH16N170AH1 IXGH16N170AH1 IXYS Description: IGBT NPT 1700V 16A TO-247AD
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 230 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
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IXGT16N170AH1 IXGT16N170AH1 IXYS Description: IGBT NPT 1700V 16A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 230 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-268AA
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
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MUBW10-06A6 IXYS Description: IGBT MODULE 600V 11A 45W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
NTC Thermistor: Yes
Supplier Device Package: E1
IGBT Type: NPT
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 45 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 435 pF @ 25 V
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MUBW10-06A6K IXYS Description: IGBT MODULE 600V 11A 50W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: E1
IGBT Type: NPT
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 65 µA
Input Capacitance (Cies) @ Vce: 220 pF @ 25 V
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BT134W-600D,115 2623888.pdf
BT134W-600D,115
Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BT134W-600D,115 - Triac, 600 V, 1 A, SOT-223, 1 V, 11 A, 10 mA
tariffCode: 85413000
Bauform - Triac: SOT-223
rohsCompliant: YES
Haltestrom, max.: 10mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 11A
Spitzen-Durchlassspannung: 1.5V
MSL: -
usEccn: EAR99
euEccn: NLR
RMS-Durchlassstrom: 1A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 4Pin(s)
Produktpalette: BT134W
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+55.82 грн
22+38.94 грн
100+26.59 грн
Мінімальне замовлення: 15
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BT134W-600D,115 2623888.pdf
BT134W-600D,115
Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BT134W-600D,115 - Triac, 600 V, 1 A, SOT-223, 1 V, 11 A, 10 mA
tariffCode: 85413000
Bauform - Triac: SOT-223
rohsCompliant: YES
Haltestrom, max.: 10mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 11A
Spitzen-Durchlassspannung: 1.5V
MSL: -
usEccn: EAR99
euEccn: NLR
RMS-Durchlassstrom: 1A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 4Pin(s)
Produktpalette: BT134W
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+26.59 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
BT148W-600R,115 2623910.pdf
BT148W-600R,115
Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BT148W-600R,115 - Thyristor, 600 V, 200 µA, 600 mA, 1 A, SOT-223, 4 Pin(s)
tariffCode: 85413000
rohsCompliant: YES
Haltestrom, max.: 6mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 11A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Durchlassstrom, durchschnittlich: 600mA
euEccn: NLR
RMS-Durchlassstrom: 1A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 4Pin(s)
Produktpalette: BT148W
Zündstrom, max.: 200µA
productTraceability: No
Thyristormontage: Oberflächenmontage
Bauform - Thyristor: SOT-223
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
на замовлення 1359 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+55.00 грн
22+37.46 грн
50+31.53 грн
200+23.78 грн
500+17.99 грн
Мінімальне замовлення: 15
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BT148W-600R,115 2623910.pdf
BT148W-600R,115
Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BT148W-600R,115 - Thyristor, 600 V, 200 µA, 600 mA, 1 A, SOT-223, 4 Pin(s)
tariffCode: 85413000
rohsCompliant: YES
Haltestrom, max.: 6mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 11A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Durchlassstrom, durchschnittlich: 600mA
euEccn: NLR
RMS-Durchlassstrom: 1A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 4Pin(s)
Produktpalette: BT148W
Zündstrom, max.: 200µA
productTraceability: No
Thyristormontage: Oberflächenmontage
Bauform - Thyristor: SOT-223
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
на замовлення 1359 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+31.53 грн
200+23.78 грн
500+17.99 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
BTF60702ERVXUMA1 2873420.pdf
BTF60702ERVXUMA1
Виробник: INFINEON
Description: INFINEON - BTF60702ERVXUMA1 - LEISTUNGSSCHALT. AEC-Q100, -40 BIS 150°C
tariffCode: 85423990
Durchlasswiderstand: 0.06ohm
rohsCompliant: YES
Überhitzungsschutz: Ja
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q100
Strombegrenzung: 11A
IC-Gehäuse / Bauform: TDSO
usEccn: EAR99
Anzahl der Kanäle: 2Kanäle
Betriebstemperatur, min.: -40°C
Polarität der Eingänge On / Enable: Aktiv-High
Leistungsschaltertyp: High-Side
euEccn: NLR
Eingangsspannung: 36V
Anzahl der Pins: 14Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 150°C
Anzahl der Ausgänge: 2Ausgänge
SVHC: No SVHC (21-Jan-2025)
на замовлення 3289 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+334.26 грн
10+252.75 грн
25+233.82 грн
50+206.41 грн
100+180.65 грн
250+171.48 грн
500+166.54 грн
1000+161.60 грн
Мінімальне замовлення: 3
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BTF60702ERVXUMA1 2873420.pdf
BTF60702ERVXUMA1
Виробник: INFINEON
Description: INFINEON - BTF60702ERVXUMA1 - LEISTUNGSSCHALT. AEC-Q100, -40 BIS 150°C
tariffCode: 85423990
Durchlasswiderstand: 0.06ohm
rohsCompliant: YES
Überhitzungsschutz: Ja
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q100
Strombegrenzung: 11A
IC-Gehäuse / Bauform: TDSO
usEccn: EAR99
Anzahl der Kanäle: 2Kanäle
Betriebstemperatur, min.: -40°C
Polarität der Eingänge On / Enable: Aktiv-High
Leistungsschaltertyp: High-Side
euEccn: NLR
Eingangsspannung: 36V
Anzahl der Pins: 14Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 150°C
Anzahl der Ausgänge: 2Ausgänge
SVHC: No SVHC (21-Jan-2025)
на замовлення 3289 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+180.65 грн
250+171.48 грн
500+166.54 грн
1000+161.60 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
BTT62001ENAXUMA1 2873428.pdf
BTT62001ENAXUMA1
Виробник: INFINEON
Description: INFINEON - BTT62001ENAXUMA1 - LEISTUNGSSCHALT. AEC-Q100, -40 BIS 150°C
tariffCode: 85423990
Durchlasswiderstand: 0.2ohm
rohsCompliant: YES
Überhitzungsschutz: Ja
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q100
Strombegrenzung: 11A
IC-Gehäuse / Bauform: TDSO
MSL: MSL 2A - 4 Wochen
usEccn: EAR99
Anzahl der Kanäle: 1Kanäle
Betriebstemperatur, min.: -40°C
Polarität der Eingänge On / Enable: Aktiv-High
Leistungsschaltertyp: High-Side
euEccn: NLR
Eingangsspannung: 36V
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Anzahl der Ausgänge: 1Ausgänge
SVHC: No SVHC (21-Jan-2025)
на замовлення 2894 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+82.33 грн
500+68.80 грн
1500+61.46 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
BTT62001ENAXUMA1 2873428.pdf
BTT62001ENAXUMA1
Виробник: INFINEON
Description: INFINEON - BTT62001ENAXUMA1 - LEISTUNGSSCHALT. AEC-Q100, -40 BIS 150°C
tariffCode: 85423990
Durchlasswiderstand: 0.2ohm
rohsCompliant: YES
Überhitzungsschutz: Ja
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q100
Strombegrenzung: 11A
IC-Gehäuse / Bauform: TDSO
MSL: MSL 2A - 4 Wochen
usEccn: EAR99
Anzahl der Kanäle: 1Kanäle
Betriebstemperatur, min.: -40°C
Polarität der Eingänge On / Enable: Aktiv-High
Leistungsschaltertyp: High-Side
euEccn: NLR
Eingangsspannung: 36V
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Anzahl der Ausgänge: 1Ausgänge
SVHC: No SVHC (21-Jan-2025)
на замовлення 2894 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+137.49 грн
50+92.21 грн
100+82.33 грн
500+68.80 грн
1500+61.46 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BTT62004ESAXUMA1 2873429.pdf
BTT62004ESAXUMA1
Виробник: INFINEON
Description: INFINEON - BTT62004ESAXUMA1 - Leistungsverteilungsschalter, High-Side, 4 Ausgänge, 36V, 0.2 Ohm, TSSOP, 24 Pins
tariffCode: 85423990
Durchlasswiderstand: 0.2ohm
rohsCompliant: YES
Überhitzungsschutz: Ja
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q100
Strombegrenzung: 11A
IC-Gehäuse / Bauform: TSDSO
MSL: MSL 2A - 4 Wochen
usEccn: EAR99
Anzahl der Kanäle: 4Kanäle
Betriebstemperatur, min.: -40°C
Polarität der Eingänge On / Enable: Aktiv-High
Leistungsschaltertyp: High-Side
euEccn: NLR
Eingangsspannung: 36V
Anzahl der Pins: 24Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 150°C
Anzahl der Ausgänge: 4Ausgänge
SVHC: No SVHC (21-Jan-2025)
на замовлення 67897 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+165.13 грн
250+156.66 грн
500+151.02 грн
1000+146.08 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
BTT62004ESAXUMA1 2873429.pdf
BTT62004ESAXUMA1
Виробник: INFINEON
Description: INFINEON - BTT62004ESAXUMA1 - Leistungsverteilungsschalter, High-Side, 4 Ausgänge, 36V, 0.2 Ohm, TSSOP, 24 Pins
tariffCode: 85423990
Durchlasswiderstand: 0.2ohm
rohsCompliant: YES
Überhitzungsschutz: Ja
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q100
Strombegrenzung: 11A
IC-Gehäuse / Bauform: TSDSO
MSL: MSL 2A - 4 Wochen
usEccn: EAR99
Anzahl der Kanäle: 4Kanäle
Betriebstemperatur, min.: -40°C
Polarität der Eingänge On / Enable: Aktiv-High
Leistungsschaltertyp: High-Side
euEccn: NLR
Eingangsspannung: 36V
Anzahl der Pins: 24Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 150°C
Anzahl der Ausgänge: 4Ausgänge
SVHC: No SVHC (21-Jan-2025)
на замовлення 67897 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+330.96 грн
10+231.35 грн
25+222.29 грн
50+198.00 грн
100+165.13 грн
250+156.66 грн
500+151.02 грн
1000+146.08 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
HGTG11N120CN FAIRS45381-1.pdf?t.download=true&u=5oefqw
HGTG11N120CN
Виробник: Fairchild Semiconductor
Description: IGBT NPT 1200V 43A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/180ns
Switching Energy: 400µJ (on), 1.3mJ (off)
Test Condition: 960V, 11A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
144+153.05 грн
Мінімальне замовлення: 144
В кошику  од. на суму  грн.
HGTG11N120CND hgtg11n120cnd-d.pdf
HGTG11N120CND
Виробник: onsemi
Description: IGBT NPT 1200V 43A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/180ns
Switching Energy: 950µJ (on), 1.3mJ (off)
Test Condition: 960V, 11A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+469.98 грн
30+258.22 грн
120+215.43 грн
В кошику  од. на суму  грн.
IRGB4607DPBF IRSD-S-A0000175683-1.pdf?t.download=true&u=5oefqw
IRGB4607DPBF
Виробник: International Rectifier
Description: IGBT 600V 11A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
281+78.36 грн
Мінімальне замовлення: 281
В кошику  од. на суму  грн.
IRGB4B60KD1PBF IRGB4B60KD1PBF.pdf?t.download=true&u=n9mhyd
Виробник: International Rectifier
Description: IGBT NPT 600V 11A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
на замовлення 57450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
268+82.02 грн
Мінімальне замовлення: 268
В кошику  од. на суму  грн.
IRGIB6B60KDPBF-INF IRSDS09614-1.pdf?t.download=true&u=5oefqw
IRGIB6B60KDPBF-INF
Виробник: Infineon Technologies
Description: IGBT 600V 11A TO220 FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 91 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO220 Full Pack
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 38 W
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+112.04 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
IRGS4607DPBF IRGx4607DPbF.pdf
IRGS4607DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 11A 58W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
268+82.02 грн
Мінімальне замовлення: 268
В кошику  од. на суму  грн.
IRGS4607DPBF IRSD-S-A0000175683-1.pdf?t.download=true&u=5oefqw
IRGS4607DPBF
Виробник: International Rectifier
Description: IGBT 600V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
на замовлення 422 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
268+82.02 грн
Мінімальне замовлення: 268
В кошику  од. на суму  грн.
IRGS4607DTRLPBF irgs4607dpbf.pdf?fileId=5546d462533600a40153565ad64324ca
IRGS4607DTRLPBF
Виробник: International Rectifier
Description: IGBT 600V 11A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
245+90.07 грн
Мінімальне замовлення: 245
В кошику  од. на суму  грн.
IRGS4B60KD1TRRP IRSDS10536-1.pdf?t.download=true&u=5oefqw
IRGS4B60KD1TRRP
Виробник: International Rectifier
Description: IGBT NPT 600V 11A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Active
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
259+106.18 грн
Мінімальне замовлення: 259
В кошику  од. на суму  грн.
IRGSL4B60KD1PBF Infineon-SPS03N60C3-DS-v02_02-en.pdf?fileId=db3a3043416e106e0141735112803715
IRGSL4B60KD1PBF
Виробник: International Rectifier
Description: IGBT NPT 600V 11A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
241+91.53 грн
Мінімальне замовлення: 241
В кошику  од. на суму  грн.
IXGH16N170A
IXGH16N170A
Виробник: IXYS
Description: IGBT NPT 1700V 16A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+927.27 грн
30+539.12 грн
В кошику  од. на суму  грн.
IXGT16N170A
IXGT16N170A
Виробник: IXYS
Description: IGBT NPT 1700V 16A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-268AA
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1366.29 грн
30+821.88 грн
120+729.16 грн
В кошику  од. на суму  грн.
RGTVX2TS65DGC11 datasheet?p=RGTVX2TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTVX2TS65DGC11
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 111A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/150ns
Switching Energy: 2.08mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 123 nC
Current - Collector (Ic) (Max): 111 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 319 W
на замовлення 530 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+656.55 грн
30+370.93 грн
120+313.45 грн
510+264.05 грн
В кошику  од. на суму  грн.
RGTVX2TS65DGC13 rgtvx2ts65d-e.pdf
RGTVX2TS65DGC13
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 111A TO247GE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 111 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247GE
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/150ns
Switching Energy: 2.08mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 123 nC
Current - Collector (Ic) (Max): 111 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 319 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+526.35 грн
10+347.08 грн
120+282.15 грн
В кошику  од. на суму  грн.
RGTVX2TS65GC11 datasheet?p=RGTVX2TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTVX2TS65GC11
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 111A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/150ns
Switching Energy: 2.08mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 123 nC
Current - Collector (Ic) (Max): 111 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 319 W
на замовлення 408 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+280.24 грн
30+147.83 грн
120+120.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RGTVX2TS65GC13 rgtvx2ts65-e.pdf
RGTVX2TS65GC13
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 111A TO247GE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247GE
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/150ns
Switching Energy: 2.08mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 123 nC
Current - Collector (Ic) (Max): 111 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 319 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+532.70 грн
10+346.92 грн
120+247.65 грн
600+199.94 грн
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STGF14NC60KD en.CD00058415.pdf
STGF14NC60KD
Виробник: STMicroelectronics
Description: IGBT 600V 11A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 22.5ns/116ns
Switching Energy: 82µJ (on), 155µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 34.4 nC
Part Status: Active
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 28 W
на замовлення 673 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+183.39 грн
50+86.51 грн
100+77.75 грн
500+58.54 грн
Мінімальне замовлення: 2
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APT11GP60BDQBG APT11GP60BDQBG.pdf
APT11GP60BDQBG
Виробник: Microsemi Corporation
Description: IGBT PT 600V 41A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 11A
Supplier Device Package: TO-247-3
IGBT Type: PT
Td (on/off) @ 25°C: 7ns/29ns
Switching Energy: 46µJ (on), 90µJ (off)
Test Condition: 400V, 11A, 5Ohm, 15V
Gate Charge: 40 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 187 W
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BTS70081EPRXUMA1 Infineon-BTS7008-1EPR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192f6a77abe4355
BTS70081EPRXUMA1
Виробник: Infineon Technologies
Description: BTS70081EPRXUMA1
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8.8mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTS70081EPRXUMA1 Infineon-BTS7008-1EPR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192f6a77abe4355
BTS70081EPRXUMA1
Виробник: Infineon Technologies
Description: BTS70081EPRXUMA1
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8.8mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
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CPV363M4K
CPV363M4K
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 11A 36W IMS-2
Packaging: Bulk
Package / Case: 19-SIP (13 Leads), IMS-2
Mounting Type: Through Hole
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 11A
NTC Thermistor: No
Supplier Device Package: IMS-2
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 36 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 740 pF @ 30 V
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HGTG11N120CN HGT%28G%2CP%2911N120CN%2C%20HGT1S11N120CNS.pdf
HGTG11N120CN
Виробник: onsemi
Description: IGBT NPT 1200V 43A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/180ns
Switching Energy: 400µJ (on), 1.3mJ (off)
Test Condition: 960V, 11A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
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IKA08N65ET6XKSA1 Infineon-IKA08N65ET6-DS-v02_02-EN.pdf?fileId=5546d4625e763904015e844d49a8527c
IKA08N65ET6XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A
Supplier Device Package: PG-TO220-3-FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/59ns
Switching Energy: 110µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 17 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 33 W
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IRG4BC20MDPBF IRG4BC20MDPbF.pdf
IRG4BC20MDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 18A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 11A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 21ns/463ns
Switching Energy: 410µJ (on), 2.03mJ (off)
Test Condition: 480V, 11A, 50Ohm, 15V
Gate Charge: 39 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 60 W
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IRG4BH20K-L irg4bh20k-l.pdf
IRG4BH20K-L
Виробник: Infineon Technologies
Description: IGBT 1200V 11A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4BH20K-LPBF description irg4bh20k-lpbf.pdf?fileId=5546d462533600a40153564356a822a5
IRG4BH20K-LPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 11A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4BH20K-S Infineon-IRG4BH20K-S-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015356435f0322a7
IRG4BH20K-S
Виробник: Infineon Technologies
Description: IGBT 1200V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4BH20K-SPBF Infineon-IRG4BH20K-S-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015356435f0322a7
IRG4BH20K-SPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4BH20K-STRLP irg4bh20k-spbf.pdf?fileId=5546d462533600a4015356435f0322a7
IRG4BH20K-STRLP
Виробник: Infineon Technologies
Description: IGBT 1200V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4PH20K Infineon-IRG4PH20K-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015356480a3a230b
IRG4PH20K
Виробник: Infineon Technologies
Description: IGBT 1200V 11A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4PH20KD description Infineon-IRG4PH20KD-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a40153564801182309
IRG4PH20KD
Виробник: Infineon Technologies
Description: IGBT 1200V 11A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/100ns
Switching Energy: 620µJ (on), 300µJ (off)
Test Condition: 800V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4PH20KDPBF irg4ph20kdpbf.pdf?fileId=5546d462533600a40153564801182309
IRG4PH20KDPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 11A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/100ns
Switching Energy: 620µJ (on), 300µJ (off)
Test Condition: 800V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRG4PH20KPBF irg4ph20kpbf.pdf?fileId=5546d462533600a4015356480a3a230b
IRG4PH20KPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 11A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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IRGB4607DPBF IRGx4607DPbF.pdf
IRGB4607DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 11A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
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IRGB4B60KD1PBF fundamentals-of-power-semiconductors
IRGB4B60KD1PBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 11A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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IRGI4045DPBF irgi4045dpbf.pdf
IRGI4045DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 11A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/73ns
Switching Energy: 64µJ (on), 123µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 33 W
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IRGI4061DPBF irgi4061dpbf.pdf
IRGI4061DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 20A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.59V @ 15V, 11A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 37ns/111ns
Switching Energy: 52µJ (on), 231µJ (off)
Test Condition: 400V, 11A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 43 W
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IRGI4090PBF IRGI4090PbF.pdf
IRGI4090PBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 300V 21A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.94V @ 15V, 30A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/99ns
Test Condition: 240V, 11A, 10Ohm
Gate Charge: 34 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 34 W
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IRGIB6B60KD116P irgib6b60kd.pdf
IRGIB6B60KD116P
Виробник: Infineon Technologies
Description: IGBT NPT 600V 11A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 38 W
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IRGIB6B60KDPBF irgib6b60kdpbf.pdf?fileId=5546d462533600a40153565259dd2434
IRGIB6B60KDPBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 11A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 38 W
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IRGS4607DPBF IRGx4607DPbF.pdf
IRGS4607DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 11A 58W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
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IRGS4B60KD1PBF fundamentals-of-power-semiconductors
IRGS4B60KD1PBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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IRGS4B60KD1TRLP fundamentals-of-power-semiconductors
IRGS4B60KD1TRLP
Виробник: Infineon Technologies
Description: IGBT NPT 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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IRGS4B60KD1TRLP fundamentals-of-power-semiconductors
IRGS4B60KD1TRLP
Виробник: Infineon Technologies
Description: IGBT NPT 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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IRGS4B60KD1TRRP fundamentals-of-power-semiconductors
IRGS4B60KD1TRRP
Виробник: Infineon Technologies
Description: IGBT NPT 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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IRGSL4B60KD1PBF fundamentals-of-power-semiconductors
IRGSL4B60KD1PBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 11A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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IXGH16N170AH1
IXGH16N170AH1
Виробник: IXYS
Description: IGBT NPT 1700V 16A TO-247AD
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 230 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
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IXGT16N170AH1
IXGT16N170AH1
Виробник: IXYS
Description: IGBT NPT 1700V 16A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 230 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-268AA
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
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MUBW10-06A6
Виробник: IXYS
Description: IGBT MODULE 600V 11A 45W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
NTC Thermistor: Yes
Supplier Device Package: E1
IGBT Type: NPT
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 45 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 435 pF @ 25 V
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MUBW10-06A6K
Виробник: IXYS
Description: IGBT MODULE 600V 11A 50W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: E1
IGBT Type: NPT
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 65 µA
Input Capacitance (Cies) @ Vce: 220 pF @ 25 V
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