Технічний опис BTS110E3045ANTMA1 Infineon Technologies
Description: MOSFET N-CH 100V 10A TO220AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V.
Інші пропозиції BTS110E3045ANTMA1
| Фото | Назва | Виробник | Інформація |
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BTS110E3045ANTMA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 100V 10A TO220ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
товар відсутній |