BTS110NKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 100V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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Технічний опис BTS110NKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V.