BTS244ZE3043 Infineon Technologies
Виробник: Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
на замовлення 4726 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 104+ | 209.18 грн |
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Технічний опис BTS244ZE3043 Infineon Technologies
Description: MOSFET N-CH 55V 35A TO220-5-43, Packaging: Tube, Package / Case: TO-220-5, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V, FET Feature: Temperature Sensing Diode, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 2V @ 130µA, Supplier Device Package: P-TO220-5-43, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V.
Інші пропозиції BTS244ZE3043
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Доступність |
Ціна |
|---|---|---|---|---|---|
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BTS244Z E3043 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 55V 35A Automotive 5-Pin(5+Tab) TO-220AB Tube |
товару немає в наявності |
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BTS244Z E3043 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 55V 35A TO220-5-43 Packaging: Tube Package / Case: TO-220-5 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: P-TO220-5-43 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V |
товару немає в наявності |
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BTS244Z E3043 | Виробник : Infineon Technologies |
MOSFET N-Ch 55V 35A TO220-5 |
товару немає в наявності |