BTS244ZE3062ANTMA1 Infineon Technologies


INFNS27930-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: BTS244 - TEMPFET, AUTOMOTIVE LOW
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Packaging: Bulk
на замовлення 24500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
670+34.95 грн
Мінімальне замовлення: 670 шт
В кошику  од. на суму  грн.
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Технічний опис BTS244ZE3062ANTMA1 Infineon Technologies

Description: BTS244 - TEMPFET, AUTOMOTIVE LOW, Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TO263-5-2, Vgs(th) (Max) @ Id: 2V @ 130µA, Power Dissipation (Max): 170W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB, Packaging: Bulk.