Технічний опис BTS247ZAKSA1 Infineon Technologies
Description: MOSFET N-CH 55V 33A TO220-5-3, Packaging: Tube, Package / Case: TO-220-5 Formed Leads, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V, FET Feature: Temperature Sensing Diode, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 2V @ 90µA, Supplier Device Package: PG-TO220-5-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V.
Інші пропозиції BTS247ZAKSA1
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BTS247ZAKSA1 | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-5 Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TO220-5-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V |
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