
BTS7904BATMA1 Infineon Technologies

Description: MOSFET N/P-CH 55V/30V 40A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 69W, 96W
Drain to Source Voltage (Vdss): 55V, 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-5-1
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Технічний опис BTS7904BATMA1 Infineon Technologies
Description: MOSFET N/P-CH 55V/30V 40A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 69W, 96W, Drain to Source Voltage (Vdss): 55V, 30V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V, Rds On (Max) @ Id, Vgs: 11.7mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 40µA, Supplier Device Package: PG-TO263-5-1.