BU2010L-7001E3/51 Vishay General Semiconductor - Diodes Division



Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE BRIDGE 20A 1000V
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tape & Reel (TR)
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Технічний опис BU2010L-7001E3/51 Vishay General Semiconductor - Diodes Division

Description: DIODE BRIDGE 20A 1000V, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A, Current - Average Rectified (Io): 3.5 A, Voltage - Peak Reverse (Max): 1 kV, Part Status: Obsolete, Supplier Device Package: isoCINK+™ BU, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, BU, Packaging: Tape & Reel (TR).