BUK625R0-40C,118-NXP NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 90A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 158W (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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Технічний опис BUK625R0-40C,118-NXP NXP USA Inc.
Description: MOSFET N-CH 40V 90A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 158W (Ta), Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.