BUK6C2R1-55C,118-NX NXP USA Inc.
Виробник: NXP USA Inc.
Description: PFET, 228A I(D), 55V, 0.0037OHM,
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Bulk
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Технічний опис BUK6C2R1-55C,118-NX NXP USA Inc.
Description: PFET, 228A I(D), 55V, 0.0037OHM,, Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK-7, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 228A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Packaging: Bulk.