Технічний опис BUK7107-55ATE,118 NEXPERIA
Description: MOSFET N-CH 55V 75A D2PAK, Packaging: Bulk, Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V, Power Dissipation (Max): 272W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V.
Інші пропозиції BUK7107-55ATE,118
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BUK7107-55ATE,118 | Виробник : NXP USA Inc. |
 Description: MOSFET N-CH 55V 75A D2PAKPackaging: Bulk Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V Power Dissipation (Max): 272W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
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