BUK7107-55ATE,118 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Packaging: Bulk
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Технічний опис BUK7107-55ATE,118 NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 272W (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB, Packaging: Bulk.