BUK7524-55A,127 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 47A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-220-3
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
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Технічний опис BUK7524-55A,127 NXP USA Inc.
Description: MOSFET N-CH 55V 47A TO220AB, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 106W (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Package / Case: TO-220-3, Packaging: Tube, Mounting Type: Through Hole, Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete.