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BUK762R6-40E,118

BUK762R6-40E,118 Nexperia USA Inc.

BUK762R6-40E.pdf
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7130 pF @ 25 V
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Технічний опис BUK762R6-40E,118 Nexperia USA Inc.

Description: MOSFET N-CH 40V 100A D2PAK, Qualification: AEC-Q101, Grade: Automotive, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 263W (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 7130 pF @ 25 V.

Інші пропозиції BUK762R6-40E,118

Фото Назва Виробник Інформація Доступність Ціна
BUK762R6-40E,118 BUK762R6-40E,118 Nexperia USA Inc. BUK762R6-40E.pdf Description: MOSFET N-CH 40V 100A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7130 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
BUK762R6-40E,118 BUK762R6-40E,118 Nexperia BUK762R6-40E-1319885.pdf MOSFET N-channel TrenchMOS standard level FET
товару немає в наявності
 Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
BUK762R6-40E,118 BUK762R6-40E.pdf
BUK762R6-40E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7130 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
BUK762R6-40E,118 BUK762R6-40E-1319885.pdf
BUK762R6-40E,118
Виробник: Nexperia
MOSFET N-channel TrenchMOS standard level FET
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.