BUK7E2R3-40E,127-NXP NXP USA Inc.
Виробник: NXP USA Inc.
Description: PFET, 120A I(D), 40V, 0.0023OHM,
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 293W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
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Технічний опис BUK7E2R3-40E,127-NXP NXP USA Inc.
Description: PFET, 120A I(D), 40V, 0.0023OHM,, Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 109.2 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 293W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube.