BUK9213-30A,118

BUK9213-30A,118 NXP Semiconductors


76528758674308buk9213-30a.pdf Виробник: NXP Semiconductors
Trans MOSFET N-CH 30V 75A Automotive 3-Pin(2+Tab) DPAK T/R
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Технічний опис BUK9213-30A,118 NXP Semiconductors

Description: MOSFET N-CH 30V 55A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2852 pF @ 25 V.

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BUK9213-30A,118 BUK9213-30A,118 Виробник : NXP USA Inc. BUK9213-30A.pdf Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2852 pF @ 25 V
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