Технічний опис BUK951R6-30E,127 NEXPERIA
Description: MOSFET N-CH 30V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V, Power Dissipation (Max): 349W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 16150 pF @ 25 V.
Інші пропозиції BUK951R6-30E,127
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
BUK951R6-30E,127 | Виробник : NXP USA Inc. |
Description: MOSFET N-CH 30V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V Power Dissipation (Max): 349W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 16150 pF @ 25 V |
товару немає в наявності |