BUK9Y9R9-80E,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 80V LFPAK56 PWR-SO8
Drain to Source Voltage (Vdss): 80 V
Supplier Device Package: LFPAK56, Power-SO8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
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Технічний опис BUK9Y9R9-80E,115 NXP USA Inc.
Description: MOSFET N-CH 80V LFPAK56 PWR-SO8, Drain to Source Voltage (Vdss): 80 V, Supplier Device Package: LFPAK56, Power-SO8, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).