BXC65R650D BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 21A; 63W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 13.3nC
Kind of package: reel; tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 21A; 63W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 13.3nC
Kind of package: reel; tube
Kind of channel: enhancement
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Технічний опис BXC65R650D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 21A; 63W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 7A, Pulsed drain current: 21A, Power dissipation: 63W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 0.65Ω, Mounting: SMD, Gate charge: 13.3nC, Kind of package: reel; tube, Kind of channel: enhancement.