BXC70R1K0D BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 16A; 44.64W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 44.64W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 16A; 44.64W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 44.64W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tube
Kind of channel: enhancement
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Технічний опис BXC70R1K0D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 16A; 44.64W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 700V, Drain current: 4A, Pulsed drain current: 16A, Power dissipation: 44.64W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 1Ω, Mounting: SMD, Gate charge: 9.3nC, Kind of package: reel; tube, Kind of channel: enhancement.