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BXE75T60HFHD BRIDGELUX


pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB8996261DF8B00D2&compId=BXE75T60HFHD.pdf?ci_sign=0dfab1d30b42d11d790e765913dd5cb350e3c327 Виробник: BRIDGELUX
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 156W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 156W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Turn-on time: 185ns
Turn-off time: 391ns
Features of semiconductor devices: integrated anti-parallel diode
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Технічний опис BXE75T60HFHD BRIDGELUX

Category: THT IGBT transistors, Description: Transistor: IGBT; 600V; 75A; 156W; TO247-3, Type of transistor: IGBT, Collector-emitter voltage: 600V, Collector current: 75A, Power dissipation: 156W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Mounting: THT, Gate charge: 430nC, Kind of package: tube, Turn-on time: 185ns, Turn-off time: 391ns, Features of semiconductor devices: integrated anti-parallel diode.