BXP13N50F BRIDGELUX
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 6+ | 81.13 грн |
| 10+ | 60.44 грн |
| 25+ | 53.92 грн |
| 100+ | 45.29 грн |
| 250+ | 40.72 грн |
| 500+ | 35.98 грн |
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Технічний опис BXP13N50F BRIDGELUX
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 8.1A, Pulsed drain current: 52A, Power dissipation: 51W, Case: TO220F, Gate-source voltage: ±30V, On-state resistance: 0.46Ω, Mounting: THT, Gate charge: 38nC, Kind of package: tube, Kind of channel: enhancement.