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BXP16N65F

BXP16N65F BRIDGELUX

pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE5DED9C90C0D2&compId=BXP16N65.pdf?ci_sign=3f2dd72d3cc9b160890d51a3df4ac4ba5a020111 Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 64A
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Технічний опис BXP16N65F BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 10.1A, Power dissipation: 43W, Case: TO220F, Gate-source voltage: ±30V, On-state resistance: 0.56Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 35nC, Pulsed drain current: 64A.