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BXP18N20F

BXP18N20F BRIDGELUX

BXP18N20.pdf
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 11A
Gate-source voltage: ±30V
Power dissipation: 55W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
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Технічний опис BXP18N20F BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F, Case: TO220F, Mounting: THT, On-state resistance: 0.18Ω, Drain current: 11A, Gate-source voltage: ±30V, Power dissipation: 55W, Pulsed drain current: 72A, Drain-source voltage: 200V, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: tube, Polarisation: unipolar, Gate charge: 23nC.