BXP4N60D BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 13.2nC
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.73 грн |
| 17+ | 25.06 грн |
| 25+ | 22.35 грн |
| 100+ | 18.79 грн |
| 250+ | 16.93 грн |
| 500+ | 14.90 грн |
| 1000+ | 13.37 грн |
| 2500+ | 12.70 грн |
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Технічний опис BXP4N60D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 2.5A, Power dissipation: 77W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 2.5Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 16A, Gate charge: 13.2nC.


