BXP4N65D BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 77W
Gate charge: 13nC
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.06 грн |
| 23+ | 18.45 грн |
| 26+ | 16.45 грн |
| 100+ | 13.79 грн |
| 250+ | 12.38 грн |
| 500+ | 10.97 грн |
| 1000+ | 9.81 грн |
| 2500+ | 9.31 грн |
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Технічний опис BXP4N65D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 2.5A, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 2.8Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 16A, Power dissipation: 77W, Gate charge: 13nC.


