BXP4N65D BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Pulsed drain current: 16A
Power dissipation: 77W
| Кількість | Ціна |
|---|---|
| 19+ | 24.61 грн |
| 24+ | 18.37 грн |
| 26+ | 16.42 грн |
| 100+ | 13.80 грн |
| 250+ | 12.44 грн |
| 500+ | 10.92 грн |
| 1000+ | 9.82 грн |
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Технічний опис BXP4N65D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 2.5A, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 2.8Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 13nC, Pulsed drain current: 16A, Power dissipation: 77W.

