BXP5N20D BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; Idm: 20A; 41W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Gate charge: 9nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; Idm: 20A; 41W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Gate charge: 9nC
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Технічний опис BXP5N20D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 5A; Idm: 20A; 41W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 5A, Pulsed drain current: 20A, Power dissipation: 41W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 0.65Ω, Mounting: SMD, Kind of package: reel; tube, Kind of channel: enhancement, Gate charge: 9nC.