BXP7N60P BRIDGELUX
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 166W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 166W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис BXP7N60P BRIDGELUX
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 7A, Pulsed drain current: 28A, Power dissipation: 166W, Case: TO220, Gate-source voltage: ±30V, On-state resistance: 1.3Ω, Mounting: THT, Gate charge: 21nC, Kind of package: tube, Kind of channel: enhancement, кількість в упаковці: 1 шт.
Інші пропозиції BXP7N60P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BXP7N60P | Виробник : BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 28A Power dissipation: 166W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |