BXP7N65P BRIDGELUX
Виробник: BRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 689 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 69.20 грн |
| 10+ | 43.91 грн |
| 25+ | 39.21 грн |
| 100+ | 32.95 грн |
| 250+ | 29.66 грн |
| 500+ | 26.20 грн |
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Технічний опис BXP7N65P BRIDGELUX
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 3.9A, Pulsed drain current: 28A, Power dissipation: 167W, Case: TO220, Gate-source voltage: ±30V, On-state resistance: 1.4Ω, Mounting: THT, Gate charge: 21nC, Kind of package: tube, Kind of channel: enhancement.