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BXP7N80F

BXP7N80F BRIDGELUX

pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9DE7FA5A62B40D2&compId=BXP7N80.pdf?ci_sign=7c5bcea4c5325f52eb91e75b26644dcccc8f4f44 Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 28A
Power dissipation: 43.9W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
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Технічний опис BXP7N80F BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 4.2A, Pulsed drain current: 28A, Power dissipation: 43.9W, Case: TO220F, Gate-source voltage: ±30V, On-state resistance: 2Ω, Mounting: THT, Gate charge: 40nC, Kind of package: tube, Kind of channel: enhancement.