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BXS045N10C BRIDGELUX

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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56
Case: PDFN56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 75nC
On-state resistance: 7.5mΩ
Power dissipation: 167W
Drain current: 117A
Drain-source voltage: 100V
Pulsed drain current: 600A
Kind of package: reel; tape

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Технічний опис BXS045N10C BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56, Case: PDFN56, Mounting: SMD, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate-source voltage: ±20V, Gate charge: 75nC, On-state resistance: 7.5mΩ, Power dissipation: 167W, Drain current: 117A, Drain-source voltage: 100V, Pulsed drain current: 600A, Kind of package: reel; tape.