BXS105N10B BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Case: SOP8
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 71nC
On-state resistance: 10.5mΩ
Power dissipation: 3.5W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 100V
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Case: SOP8
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 71nC
On-state resistance: 10.5mΩ
Power dissipation: 3.5W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 100V
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис BXS105N10B BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8, Case: SOP8, Polarisation: unipolar, Kind of channel: enhancement, Gate charge: 71nC, On-state resistance: 10.5mΩ, Power dissipation: 3.5W, Drain current: 14A, Gate-source voltage: ±20V, Pulsed drain current: 56A, Drain-source voltage: 100V, Mounting: SMD, Type of transistor: N-MOSFET, Kind of package: reel, кількість в упаковці: 1 шт.
Інші пропозиції BXS105N10B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BXS105N10B | Виробник : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8 Case: SOP8 Polarisation: unipolar Kind of channel: enhancement Gate charge: 71nC On-state resistance: 10.5mΩ Power dissipation: 3.5W Drain current: 14A Gate-source voltage: ±20V Pulsed drain current: 56A Drain-source voltage: 100V Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel |
товару немає в наявності |