BXS130N10C BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 57W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 57W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис BXS130N10C BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 52A, Pulsed drain current: 208A, Power dissipation: 57W, Case: PDFN56, Gate-source voltage: ±20V, On-state resistance: 13mΩ, Mounting: SMD, Gate charge: 35nC, Kind of package: reel, Kind of channel: enhancement, кількість в упаковці: 1 шт.
Інші пропозиції BXS130N10C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BXS130N10C | Виробник : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Pulsed drain current: 208A Power dissipation: 57W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |