BXT070N06D BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 108W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 320A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 108W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 320A
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис BXT070N06D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 80A, Power dissipation: 108W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 7mΩ, Mounting: SMD, Gate charge: 88nC, Kind of package: reel, Kind of channel: enhancement, Pulsed drain current: 320A, кількість в упаковці: 1 шт.
Інші пропозиції BXT070N06D
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BXT070N06D | Виробник : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 108W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel Kind of channel: enhancement Pulsed drain current: 320A |
товару немає в наявності |