BXT080N03E BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 12W
Case: PDFN8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 12W
Case: PDFN8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel
Kind of channel: enhancement
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Технічний опис BXT080N03E BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 30A, Pulsed drain current: 120A, Power dissipation: 12W, Case: PDFN8, Gate-source voltage: ±20V, On-state resistance: 8mΩ, Mounting: SMD, Gate charge: 13.2nC, Kind of package: reel, Kind of channel: enhancement.