BXT1000N06M BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23-3
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Power dissipation: 1.5W
Drain current: 2A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 28+ | 16.27 грн |
| 36+ | 11.75 грн |
| 100+ | 7.83 грн |
| 500+ | 5.48 грн |
| 1000+ | 3.29 грн |
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Технічний опис BXT1000N06M BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3, Mounting: SMD, Type of transistor: N-MOSFET, Kind of package: reel; tape, Case: SOT23-3, Polarisation: unipolar, Gate charge: 5.2nC, On-state resistance: 0.11Ω, Power dissipation: 1.5W, Drain current: 2A, Pulsed drain current: 12A, Gate-source voltage: ±20V, Drain-source voltage: 60V, Kind of channel: enhancement.