BXT1000N06M BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Mounting: SMD
Pulsed drain current: 12A
Power dissipation: 1.5W
Gate charge: 5.2nC
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23-3
On-state resistance: 0.11Ω
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 17.36 грн |
| 36+ | 12.05 грн |
| 100+ | 8.00 грн |
| 500+ | 5.60 грн |
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Технічний опис BXT1000N06M BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3, Mounting: SMD, Pulsed drain current: 12A, Power dissipation: 1.5W, Gate charge: 5.2nC, Polarisation: unipolar, Drain current: 2A, Kind of channel: enhancement, Drain-source voltage: 60V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOT23-3, On-state resistance: 0.11Ω.