BXT1100P02M BRIDGELUX
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 1.25W
Pulsed drain current: -10A
Kind of package: reel
On-state resistance: 0.11Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 1.25W
Pulsed drain current: -10A
Kind of package: reel
On-state resistance: 0.11Ω
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис BXT1100P02M BRIDGELUX
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -3A, Case: SOT23, Gate-source voltage: ±10V, Mounting: SMD, Kind of channel: enhancement, Power dissipation: 1.25W, Pulsed drain current: -10A, Kind of package: reel, On-state resistance: 0.11Ω.