BXT1100P02M BRIDGELUX
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -10A
On-state resistance: 0.11Ω
Power dissipation: 1.25W
Kind of package: reel
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -10A
On-state resistance: 0.11Ω
Power dissipation: 1.25W
Kind of package: reel
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис BXT1100P02M BRIDGELUX
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -3A, Case: SOT23, Gate-source voltage: ±10V, Mounting: SMD, Kind of channel: enhancement, Pulsed drain current: -10A, On-state resistance: 0.11Ω, Power dissipation: 1.25W, Kind of package: reel, кількість в упаковці: 1 шт.
Інші пропозиції BXT1100P02M
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BXT1100P02M | Виробник : BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Case: SOT23 Gate-source voltage: ±10V Mounting: SMD Kind of channel: enhancement Pulsed drain current: -10A On-state resistance: 0.11Ω Power dissipation: 1.25W Kind of package: reel |
товару немає в наявності |