BXT1150N10D BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Mounting: SMD
Pulsed drain current: 64A
Power dissipation: 78W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 135mΩ
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.69 грн |
| 28+ | 15.29 грн |
| 35+ | 12.22 грн |
| 100+ | 10.89 грн |
| 250+ | 9.14 грн |
| 500+ | 8.31 грн |
| 1000+ | 7.31 грн |
| 2500+ | 6.56 грн |
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Технічний опис BXT1150N10D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252, Mounting: SMD, Pulsed drain current: 64A, Power dissipation: 78W, Gate charge: 21nC, Polarisation: unipolar, Drain current: 12.8A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: TO252, On-state resistance: 135mΩ.