BXT1150N10D BRIDGELUX
Виробник: BRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO252
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 78W
Drain current: 12.8A
Gate-source voltage: ±20V
Pulsed drain current: 64A
Drain-source voltage: 100V
на замовлення 4361 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 18.63 грн |
| 28+ | 14.83 грн |
| 35+ | 11.86 грн |
| 100+ | 10.63 грн |
| 250+ | 8.98 грн |
| 500+ | 8.07 грн |
| 1000+ | 7.17 грн |
| 2500+ | 6.34 грн |
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Технічний опис BXT1150N10D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: TO252, Kind of package: reel; tape, Mounting: SMD, Polarisation: unipolar, Gate charge: 21nC, On-state resistance: 135mΩ, Power dissipation: 78W, Drain current: 12.8A, Gate-source voltage: ±20V, Pulsed drain current: 64A, Drain-source voltage: 100V.