BXT1150N10D BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.8A
Pulsed drain current: 64A
Power dissipation: 78W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 24+ | 18.98 грн |
| 28+ | 15.02 грн |
| 35+ | 12.00 грн |
| 100+ | 10.74 грн |
| 250+ | 9.06 грн |
| 500+ | 8.14 грн |
| 1000+ | 7.22 грн |
| 2500+ | 6.46 грн |
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Технічний опис BXT1150N10D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 12.8A, Pulsed drain current: 64A, Power dissipation: 78W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 135mΩ, Mounting: SMD, Gate charge: 21nC, Kind of package: reel; tape, Kind of channel: enhancement.