BXT1150N10J BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Mounting: SMD
Pulsed drain current: 32A
Power dissipation: 2W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 5.6A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT89-3
On-state resistance: 135mΩ
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.63 грн |
| 46+ | 9.22 грн |
| 57+ | 7.41 грн |
| 100+ | 6.61 грн |
| 250+ | 5.52 грн |
| 500+ | 4.94 грн |
| 1000+ | 4.62 грн |
| 3000+ | 4.36 грн |
| 4000+ | 3.98 грн |
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Технічний опис BXT1150N10J BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3, Mounting: SMD, Pulsed drain current: 32A, Power dissipation: 2W, Gate charge: 21nC, Polarisation: unipolar, Drain current: 5.6A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOT89-3, On-state resistance: 135mΩ.