BXT1150N10J BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 32A
Power dissipation: 2W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
| Кількість | Ціна |
|---|---|
| 39+ | 11.85 грн |
| 46+ | 9.31 грн |
| 57+ | 7.45 грн |
| 100+ | 6.65 грн |
| 250+ | 5.55 грн |
| 500+ | 4.97 грн |
| 1000+ | 4.65 грн |
| 3000+ | 4.39 грн |
| 4000+ | 4.00 грн |
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Технічний опис BXT1150N10J BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 5.6A, Pulsed drain current: 32A, Power dissipation: 2W, Case: SOT89-3, Gate-source voltage: ±20V, On-state resistance: 135mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 21nC.