BXT1150N10J BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Drain-source voltage: 100V
Drain current: 5.6A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Mounting: SMD
Case: SOT89-3
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Drain-source voltage: 100V
Drain current: 5.6A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Mounting: SMD
Case: SOT89-3
кількість в упаковці: 5 шт
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Технічний опис BXT1150N10J BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3, Drain-source voltage: 100V, Drain current: 5.6A, On-state resistance: 135mΩ, Type of transistor: N-MOSFET, Power dissipation: 2W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 21nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 32A, Mounting: SMD, Case: SOT89-3, кількість в упаковці: 5 шт.
Інші пропозиції BXT1150N10J
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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BXT1150N10J | Виробник : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Drain-source voltage: 100V Drain current: 5.6A On-state resistance: 135mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 32A Mounting: SMD Case: SOT89-3 |
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