BXT170N06D BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Kind of channel: enhancement
Case: TO252
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 200A
Drain current: 33A
Gate charge: 49nC
On-state resistance: 25mΩ
Power dissipation: 94W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Kind of channel: enhancement
Case: TO252
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 200A
Drain current: 33A
Gate charge: 49nC
On-state resistance: 25mΩ
Power dissipation: 94W
Gate-source voltage: ±20V
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Технічний опис BXT170N06D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252, Kind of channel: enhancement, Case: TO252, Type of transistor: N-MOSFET, Mounting: SMD, Kind of package: reel; tape, Polarisation: unipolar, Drain-source voltage: 60V, Pulsed drain current: 200A, Drain current: 33A, Gate charge: 49nC, On-state resistance: 25mΩ, Power dissipation: 94W, Gate-source voltage: ±20V.